GaN HEMTsin modern power electronics.
This white paper highlights the challenges and solutions in the thermal characterization of GaN HEMTs, a key technology for efficient and compact power electronics. Discover how Simcenter Micred offers innovative approaches for testing and reliability analysis to take full advantage of GaN technologies.
Improved test methods for GaN HEMTs: Innovative approaches for precise thermal transient testing.
Optimal heat dissipation: Determination of thermal impedance and optimization of thermal resistance.
Innovative technologies: Adaptation of traditional characterization methods for wide-bandgap materials (such as GaN) to specific requirements.
Greater reliability: findings on operational reliability under high-performance conditions.
Practical test solutions: Taking advantage of Simcenter Micred for accurate measurements and analysis.
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